Electrostatic chuck for use in semiconductor processing

ABSTRACT

A semiconductor substrate processing apparatus includes a vacuum chamber having a processing zone in which a semiconductor substrate may be processed, a process gas source in fluid communication with the vacuum chamber for supplying a process gas into the vacuum chamber, a showerhead module through which process gas from the process gas source is supplied to the processing zone of the vacuum chamber, and a substrate pedestal module. The substrate pedestal module includes a pedestal made of ceramic material having an upper surface configured to support a semiconductor substrate thereon during processing, a stem made of ceramic material, and coplanar electrodes embedded in the platen, the electrodes including an outer RF electrode and inner electrostatic clamping electrodes, the outer RF electrode including a ring-shaped electrode and a radially extending lead extending from the ring-shaped electrode to a central portion of the platen, wherein the ceramic material of the platen and the electrodes comprise a unitary body made in a single sintering step.

INCORPORATION BY REFERENCE

An Application Data Sheet is filed concurrently with this specificationas part of the present application. Each application that the presentapplication claims benefit of or priority to as identified in theconcurrently filed Application Data Sheet is incorporated by referenceherein in their entireties and for all purposes.

FIELD OF THE INVENTION

This invention pertains to semiconductor substrate processingapparatuses for processing semiconductor substrates, and may findparticular use in plasma-enhanced chemical vapor depositions processingapparatuses operable to deposit thin films.

BACKGROUND

Semiconductor substrate processing apparatuses are used to processsemiconductor substrates by techniques including etching, physical vapordeposition (PVD), chemical vapor deposition (CVD), plasma-enhancedchemical vapor deposition (PECVD), atomic layer deposition (ALD),plasma-enhanced atomic layer deposition (PEALD), pulsed deposition layer(PDL), plasma-enhanced pulsed deposition layer (PEPDL), and resistremoval. One type of semiconductor substrate processing apparatus is aplasma processing apparatus that includes a reaction chamber containingupper and lower electrodes wherein a radio frequency (RF) power isapplied between the electrodes to excite a process gas into plasma forprocessing semiconductor substrates in the reaction chamber.

SUMMARY

Disclosed herein is a semiconductor substrate processing apparatus forprocessing semiconductor substrates, comprising a vacuum chamberincluding a processing zone in which a semiconductor substrate may beprocessed; a process gas source in fluid communication with the vacuumchamber for supplying a process gas into the vacuum chamber; ashowerhead module through which process gas from the process gas sourceis supplied to the processing zone of the vacuum chamber; and asubstrate pedestal module including a platen made of ceramic materialhaving an upper surface configured to support a semiconductor substratethereon during processing; a stem made of ceramic material having anupper stem flange that supports the platen; and coplanar electrodesembedded in the platen, the electrodes including an outer RF electrodeand inner electrostatic clamping electrodes, the outer RF electrodeincluding a ring-shaped electrode and at least one radially extendinglead extending from the ring-shaped electrode to a central portion ofthe platen, wherein the ceramic material of the platen and theelectrodes comprise a unitary body made in a single sintering step.

According to an embodiment, the platen includes first and secondD-shaped electrostatic clamping electrodes inward of the ring-shapedelectrode, the radially extending lead extending diagonally across theplaten and connected to the ring-shaped electrode at two locations 180°apart with the first and second D-shaped electrodes on opposite sides ofthe radially extending lead. The platen can include a first terminal ata center of the platen, a second terminal radially offset from the firstterminal, and a third terminal radially offset from the first terminal,the first terminal electrically connected to the radially extending leadof the ring-shaped electrode, the second terminal electrically connectedto the first D-shaped electrode and the third terminal electricallyconnected to the second D-shaped electrode. The first, second and thirdterminals can extend axially through openings in the platen and thesecond and third terminals can be aligned along a diagonal line passingthrough the location of the first terminal.

In another arrangement, the platen can include first, second, third andfourth electrostatic clamping electrodes inward of the ring-shapedelectrode, the at least one radially extending feed strip comprising twofeed strips extending diagonally across the platen, each of the feedstrips connected to the ring-shaped electrode at two locations 180°apart, the feed strips intersecting at the center of the platen with thefirst, second, third and fourth electrostatic clamping electrodeslocated between the diagonally extending feed strips.

The platen can be made of any suitable ceramic material and theelectrodes can be made of any suitable electrically conductive material.For example, the platen can be made of aluminum nitride and theelectrodes can be made of tungsten. The platen can include three throughholes configured to receive lift pins and the platen can have a diameterof at least 300 mm.

In the embodiment wherein the electrostatic clamping electrodes areD-shaped electrodes, the ring-shaped electrode can be separated from theD-shaped electrodes by a first continuous wall of ceramic materialextending around the first D-shaped electrode and a second continuouswall of ceramic material extending around the second D-shaped electrode.The first and second walls of ceramic material can have the same widthwith the width of the first and second walls of ceramic material beingless than a width of the radially extending lead.

Also disclosed herein is an electrostatic chuck useful for processingsemiconductor substrates in a vacuum chamber including a processing zonein which a semiconductor substrate may be processed. The electrostaticchuck comprises a platen made of ceramic material having an uppersurface configured to support a semiconductor substrate thereon duringprocessing and coplanar electrodes embedded in the platen. Theelectrodes include an outer RF electrode and inner electrostaticclamping electrodes, the outer RF electrode including a ring-shapedelectrode and at least one radially extending lead extending from thering-shaped electrode to a central portion of the platen, wherein theceramic material of the platen and the electrodes comprise a unitarybody made in a single sintering step.

BRIEF DESCRIPTION OF THE DRAWING FIGURES

FIG. 1 illustrates a schematic diagram showing an overview of a chemicaldeposition apparatus in accordance with embodiments disclosed herein.

FIG. 2 shows a top view of a ceramic high temperature chuck wherein apower distribution circuit is located below three coplanar electrodes.

FIG. 3 is an exploded view of the coplanar electrodes shown in FIG. 2and a power distribution circuit below the electrodes.

FIG. 4 is a bottom view of the chuck shown in FIG. 3 .

FIG. 5 is a top perspective view of a ceramic high temperatureelectrostatic chuck wherein an outer ring-shaped electrode includes aradially extending lead which can be electrically connected to acentrally located terminal on an underside of the chuck.

FIG. 6 is a bottom perspective view of the chuck shown in FIG. 5 .

FIG. 7 is a cutaway view showing electrical connections of the platenshown in FIG. 5 .

FIG. 8 is a perspective view of an underside of the platen shown in FIG.5 .

FIG. 9 is a cross section of the platen shown in FIG. 5 .

DETAILED DESCRIPTION

In the following detailed description, numerous specific embodiments areset forth in order to provide a thorough understanding of the apparatusand methods disclosed herein. However, as will be apparent to thoseskilled in the art, the present embodiments may be practiced withoutthese specific details or by using alternate elements or processes. Inother instances, well-known processes, procedures, and/or componentshave not been described in detail so as not to unnecessarily obscureaspects of embodiments disclosed herein. As used herein the term “about”refers to ±10%.

As indicated, present embodiments provide apparatus and associatedmethods for processing a semiconductor substrate in a semiconductorsubstrate processing apparatus such as a chemical vapor depositionapparatus or a plasma-enhanced chemical vapor deposition apparatus. Theapparatus and methods are particularly applicable for use in conjunctionwith high temperature processing of semiconductor substrates such as ahigh temperature deposition processes wherein a semiconductor substratebeing processed is heated to temperatures greater than about 550° C.,such as about 550° C. to about 650° C. or more.

Embodiments disclosed herein are preferably implemented in aplasma-enhanced chemical deposition apparatus (i.e. PECVD apparatus,PEALD apparatus, or PEPDL apparatus), however, they are not so limited.

FIG. 1 provides a simple block diagram depicting various semiconductorsubstrate plasma processing apparatus components arranged forimplementing embodiments as disclosed herein. As shown, a semiconductorsubstrate plasma processing apparatus 100 includes a vacuum chamber 102that serves to contain plasma in a processing zone, which is generatedby a capacitor type system including a showerhead module 104 having anupper RF electrode (not shown) therein working in conjunction with asubstrate pedestal module 106 having a lower RF electrode (not shown)therein. At least one RF generator is operable to supply RF energy intoa processing zone above an upper surface of a semiconductor substrate108 in the vacuum chamber 102 to energize process gas supplied into theprocessing zone of the vacuum chamber 102 into plasma such that a plasmadeposition process may be performed in the vacuum chamber 102. Forexample, a high-frequency RF generator 110 and a low-frequency RFgenerator 112 may each be connected to a matching network 114, which isconnected to the upper RF electrode of the showerhead module 104 suchthat RF energy may be supplied to the processing zone above thesemiconductor substrate 108 in the vacuum chamber 102.

The power and frequency of RF energy supplied by matching network 114 tothe interior of the vacuum chamber 102 is sufficient to generate plasmafrom the process gas. In an embodiment both the high-frequency RFgenerator 110 and the low-frequency RF generator 112 are used, and in analternate embodiment, just the high-frequency RF generator 110 is used.In a process, the high-frequency RF generator 110 may be operated atfrequencies of about 2-100 MHz; in a preferred embodiment at 13.56 MHzor 27 MHz. The low-frequency RF generator 112 may be operated at about50 kHz to 2 MHz; in a preferred embodiment at about 350 to 600 kHz. Theprocess parameters may be scaled based on the chamber volume, substratesize, and other factors. Similarly, the flow rates of process gas, maydepend on the free volume of the vacuum chamber or processing zone.

An upper surface of the substrate pedestal module 106 supports asemiconductor substrate 108 during processing within the vacuum chamber102. The substrate pedestal module 106 can include a chuck to hold thesemiconductor substrate and/or lift pins to raise and lower thesemiconductor substrate before, during and/or after the depositionand/or plasma treatment processes. In an alternate embodiment, thesubstrate pedestal module 106 can include a carrier ring to raise andlower the semiconductor substrate before, during and/or after thedeposition and/or plasma treatment processes. The chuck may be anelectrostatic chuck, a mechanical chuck, or various other types of chuckas are available for use in the industry and/or research. Details of alift pin assembly for a substrate pedestal module including anelectrostatic chuck can be found in commonly-assigned U.S. Pat. No.8,840,754, which is incorporated herein by reference in its entirety.Details of a carrier ring for a substrate pedestal module can be foundin commonly-assigned U.S. Pat. No. 6,860,965, which is incorporatedherein by reference in its entirety. A backside gas supply 116 isoperable to supply a heat transfer gas or purge gas through thesubstrate pedestal module 106 to a region below a lower surface of thesemiconductor substrate during processing. The substrate pedestal module106 includes the lower RF electrode therein wherein the lower RFelectrode is preferably grounded during processing, however in analternate embodiment, the lower RF electrode may be supplied with RFenergy during processing.

To process a semiconductor substrate in the vacuum chamber 102 of thesemiconductor substrate plasma processing apparatus 100, process gasesare introduced from a process gas source 118 into the vacuum chamber 102via inlet 120 and showerhead module 104 wherein the process gas isformed into plasma with RF energy such that a film may be deposited ontothe upper surface of the semiconductor substrate. In an embodiment,multiple source gas lines 122 may be connected to a heated manifold 124.The gases may be premixed or supplied separately to the chamber.Appropriate valving and mass flow control mechanisms are employed toensure that the correct gases are delivered through the showerheadmodule 104 during semiconductor substrate processing. During theprocessing, a backside heat transfer gas or purge gas is supplied to aregion below a lower surface of the semiconductor substrate supported onthe substrate pedestal module 102. Preferably, the processing is atleast one of chemical vapor deposition processing, plasma-enhancedchemical vapor deposition processing, atomic layer depositionprocessing, plasma-enhanced atomic layer deposition processing, pulseddeposition layer processing, or plasma-enhanced pulsed deposition layerprocessing.

In certain embodiments, a system controller 126 is employed to controlprocess conditions during deposition, post deposition treatments, and/orother process operations. The controller 126 will typically include oneor more memory devices and one or more processors. The processor mayinclude a CPU or computer, analog and/or digital input/outputconnections, stepper motor controller boards, etc.

In certain embodiments, the controller 126 controls all of theactivities of the apparatus. The system controller 126 executes systemcontrol software including sets of instructions for controlling thetiming of the processing operations, frequency and power of operationsof the low-frequency RF generator 112 and the high-frequency RFgenerator 110, flow rates and temperatures of precursors and inert gasesand their relative mixing, temperature of a semiconductor substrate 108supported on an upper surface of the substrate pedestal module 106 and aplasma exposed surface of the showerhead module 104, pressure of thevacuum chamber 102, and other parameters of a particular process. Othercomputer programs stored on memory devices associated with thecontroller may be employed in some embodiments.

High temperature chucks typically include a ceramic pedestal and asmaller diameter ceramic stem joined to the underside of the platen.See, for example, commonly-assigned U.S Patent Publication Nos.2016/0340781; 2016/0336213; and 2016/0333475, each of which is herebyincorporated by reference in its entirety.

FIG. 2 shows a platen 200 having three co-planar electrodes 202, 204,206 embedded in a ceramic body (not shown). Electrode 202 is an outerring-shaped electrode which surrounds D-shaped electrostatic clampingelectrodes 204 and 206. In order to supply power to the outerring-shaped electrode 202, a power distribution circuit 208 (see FIG. 3) is embedded in the ceramic body below the electrodes 202, 204, 206 andvertically extending conductive vias 210 connect the outer ringelectrode 202 to the power distribution circuit 208. The powerdistribution circuit 208 includes an outer ring 212 underlying the outerring-shaped electrode 202 and arms 214 extending diagonally across theouter ring 212. The power distribution circuit 208 allows power to befed from a power feed terminal (not shown) located near the center ofthe underside of the platen. The electrostatic clamping electrodes 204,206 are connected to power feed terminals (not shown) located near thecenter of the underside of the platen in spaces between the arms 214 ofthe power distribution circuit 208.

FIG. 4 shows an underside of the platen 200 wherein the arrangement ofelectrodes 202, 204, 206 can be seen along with terminals 216, 218, 220located inside hollow ceramic stem 222 attached to ceramic body 224.Terminal 216 is attached to electrostatic clamping electrode 204,terminal 220 is attached to electrostatic clamping electrode 206, andterminal 218 is attached to the intersection of arms 214 of powerdistribution circuit 208. Thus, to manufacture the platen 200, it isnecessary to carry out multiple sintering steps to embed the conductivepower distribution circuit in the ceramic body 224 below the electrodes202, 204, 206 with the result that the arms 214 and ring 212 can act asinductors and create undesired inductance effects during processing of awafer. The ceramic body 224 includes three through holes 226 sized forpassage of lift pins (not shown) for lifting and lowering a wafer onto asupport surface of the platen 200.

FIG. 5 shows an electrostatic chuck comprising platen 300 having anouter ring-shaped electrode 302 surrounding electrostatic clampingelectrodes 304, 306. The outer ring-shaped electrode 302 is designed ina way which obviates the need for a power distribution circuit. Asshown, the outer ring-shaped electrode 302 includes a radially extendinglead (power feed strip) 302 a which extends diagonally across thering-shaped electrode 302. The lead 302 a allows a terminal (not shown)at a center of the underside of the platen 300 to be electricallyconnected to the outer ring-shaped electrode 302. The electrostaticchuck is preferably a bipolar chuck with one or more pairs of clampingelectrodes having opposed polarities. For instance, the electrostaticchuck can include four clamping electrodes separated by feed stripsextending diagonally across the outer ring-shaped electrode 302. In suchcase, the feed strips would be perpendicular and the clamping electrodeswould be located inside the four quadrant shaped spaces formed by theouter ring-shaped electrode 302 and the diagonally extending feedstrips.

FIG. 6 shows an underside of the platen 300 wherein a hollow ceramicstem 322 is attached to ceramic body 324. Terminal 316 is attached toelectrostatic clamping electrode 304, terminal 320 is attached toelectrostatic clamping electrode 306, and terminal 318 is attached tolead 302 a of the ring-shaped outer electrode 302. The ceramic body 324includes three through holes 326 sized for passage of lift pins (notshown) for lifting and lowering a wafer onto a support surface of theplaten 300.

The platen 300 can be used as a high temperature electrostatic chuck ofa substrate support module for sequential processing of individualsemiconductor wafers wherein the platen 300 is a unitary body made in asingle sintering step to provide coplanar electrostatic clamping and RFelectrodes and one or more heaters below the coplanar electrodes. Asmentioned above, in prior platen designs, an embedded power distributioncircuit below the RF and electrostatic clamping electrodes includedpower distribution electrode arms which created undesirable inductanceeffects during wafer processing. By eliminating the power distributionelectrode arms, it is possible to eliminate out-of-plane inductors andsimplify the manufacturing process by conducting a single sinteringstep. In addition, by providing a feed strip 302 which extendsdiagonally across the outer ring-shaped electrode 302, it is possible tominimize adverse effects of disturbances to the RF field above the waferbeing processed.

The pedestal 300 and stem 322 are preferably of ceramic material and abottom surface of the pedestal 300 can be joined to a flange at an upperend of the stem 322 such as by brazing, friction welding, diffusionbonding, or other suitable technique. The interior of the stem 322 caninclude power supply leads, one or more thermocouple leads, and one ormore gas supply tubes which supply an inert gas such as argon (Ar) or aheat transfer gas such as helium (He) which is delivered via suitablefluid passages to an underside of a semiconductor substrate located onsupport surface.

The power leads can be one or more feed rods which supplyradio-frequency (RF), direct current (DC) and/or alternating current(AC) to electrodes embedded in the pedestal 300. The pedestal 300 ispreferably a unitary body of sintered ceramic material such as aluminumoxide (alumina), yttria, aluminum nitride, boron nitride, silicon oxide,silicon carbide, silicon nitride, titanium oxide, zirconium oxide, orother suitable material or combination of materials. Each electrodepreferably has a planar configuration and is preferably made of anelectrically conductive metallic material (e.g., tungsten, molybdenum,tantalum, niobium, cobalt) or electrically conductive non-metallicmaterial (e.g., aluminum oxide-tantalum carbide, aluminum oxide-siliconcarbide, aluminum nitride-tungsten, aluminum nitride-tantalum, yttriumoxide-molybdenum). The electrodes can be formed from powder materialswhich are co-fired with the ceramic material of the pedestal. Forexample, the electrodes can be formed of conductive paste which isco-fired with layers of the ceramic material forming the body of thepedestal. For example, the paste can include conductive metal powder ofnickel (Ni), tungsten (W), molybdenum (Mo), titanium (Ti), manganese(Mn), copper (Cu), silver (Ag), palladium (Pd), platinum (Pt), rhodium(Rh), Alternatively, the electrodes can be formed from a depositedmaterial having a desired electrode pattern or a deposited film which isetched to form a desired electrode pattern. Still yet, the electrodescan comprise preformed grids, plates, wire mesh, or other suitableelectrode material and/or configuration. In an embodiment, theelectrodes include at least one electrostatic clamping electrode whichis powered by a DC power source to provide DC chucking voltage (e.g.,about 200 to about 2000 volts), at least one RF electrode powered by aRF power source to provide RF bias voltage (e.g., one or morefrequencies of about 400 KHz to about 60 MHz at power levels of about 50to about 3000 watts) and/or at least one electrode powered by DC and RFpower sources via suitable circuitry.

The platen can be made by arranging coplanar electrodes in ceramicmaterial and conducting a single sintering step to embed the electrodesin the sintered ceramic material. Examples of techniques formanufacturing ceramic chucks can be found in commonly-assigned U.S. Pat.Nos. 5,880,922; 6,483,690; and 8,637,194, the disclosures of which arehereby incorporated by reference. For example, the outer ring-shapedelectrode with integral radially extending lead and the ESC electrodescan be screen printed on a green sheet of aluminum nitride, a greensheet of aluminum nitride or other suitable dielectric material can beplaced over the screen printed electrodes, and the resulting compact canbe heated pressed and sintered to form the platen. Terminals in holesextending into the underside of the sintered ceramic material can bebonded to each of the electrodes and the stem can be bonded to theunderside of the platen.

FIG. 7 illustrates a platen 300 which includes electrically conductiveelectrodes 304, 306 such as an electrically conductive grids and feedstrip electrode 302 a which is electrically connected to an outerring-shaped electrode 302 (not shown) embedded therein and a hollowceramic support stem 322. The platen 300 and stem 322 are preferablymade of a ceramic material such as aluminum nitride and a bottom surfaceof the platen 300 is joined to an upper end of the stem 322 such as bybrazing, friction welding, diffusion bonding, or other suitabletechnique. A centrally located electrically conductive tube 330 islocated inside the stem 322 with an upper end of the tube 330electrically connected to embedded feed strip electrode 302 a. An outletof the tube 330 is in fluid communication with a gas passage 342 in anupper surface of the platen 300. The tube 330 can be supplied an inertgas such as argon (Ar) or nitrogen (N₂) or a heat transfer gas such ashelium (He) which is delivered via gas passage 342 to an underside of asemiconductor substrate (not shown) supported on the platen 300. Theouter surface of the tube 330 can be sealed to the platen 300 by ahermetic seal 332. The inside of the stem 322 also houses othercomponents such as electrical feed rods 338 which deliver power to otherelectrodes such as resistance heaters 340 a, 340 b and additional feedrods 336 which deliver power to electrostatic clamping electrodes 304,306 in the platen 300. The rods 336 can be hollow for deliver gasthrough outlets to the underside of a wafer supported on the pedestal300.

During processing of a semiconductor substrate such as deposition offilms on a silicon wafer supported on the platen 300, the platen 300 maycycle between temperatures ranging from about 20° C. to 500° c andhigher. For processing a 300 mm wafer, the platen 300 can have athickness of up to about 1 inch and a diameter of about 15 inches, thestem 322 can have a diameter of about 3 inches and the distance betweenthe bottom of the stem 322 and the upper surface of the platen 300 canbe about 5 inches. The tubes 330, 336 can have a diameter of about 4 mm,a length of about 7 to 8 inches. The inside of the stem 322 accommodatescomponents such as electrical feeds such as palladium/rhodium (Pd/Rh)coated stainless steel or nickel (Ni) rods.

The feed rods 338 can be solid metal rods such as nickel (Ni) rodsarranged at circumferentially spaced apart locations inward of an innersurface of the stem 322, and the two outer electrically conductive feedrods 336 (which can optionally be hollow rods to deliver gas to theupper surface of platen 300) are electrically connected to electrostaticclamping electrodes 304, 306. The solid feed rods 338 can supply powerto resistance heaters 340 a, 340 b embedded in the platen 300 at alocation below the electrostatic clamping electrodes 304, 306.Electrical connections between the central tube 330 and feed strip 302a, between the feed rods 336 and the electrodes 304, 306, and betweenthe feed rods 338 and the heaters 340 a, 340 b can include solidterminals/studs/sockets as disclosed in commonly-assigned U.S. Pat. No.9,088,085, the disclosure of which is hereby incorporated by reference.During manufacture of the platen 300, the tube 330 and feed rods 336,338 can be bonded to the platen 300 and electrodes 302, 304, 306 viasuitable sintering and/or brazing techniques.

FIG. 8 shows a bottom perspective view of the substrate support pedestal106. As shown, central tube 330, feed rods 338 and outer tubes 336extend outward from a lower end of the stem 322.

FIG. 9 is a cross-sectional view of the substrate support pedestal 106.As shown, the central tube 330 is electrically connected to feed stripelectrode 302 a and two feed rods 338 are electrically connected to oneor more resistance heaters 340 a, 340 b embedded in the platen 300 at alocation below the electrodes 302, 304, 306. For instance, a pair offeed rods 338 can be connected to an inner heater and another pair offeed rods 338 can be connected to an outer heater. If desired a singleheater or more than two heaters can be embedded in the platen 300 in anydesired geometrical arrangement. The central tube 330 supplies gas to anoutlet 342 in the upper surface of the platen 300.

While the substrate pedestal module of the semiconductor substrateprocessing apparatus has been described in detail with reference tospecific embodiments thereof, it will be apparent to those skilled inthe art that various changes and modifications can be made, andequivalents employed, without departing from the scope of the appendedclaims.

What is claimed is:
 1. An electrostatic chuck, comprising: a platenhaving an upper surface configured to support a substrate; a firstelectrostatic clamping electrode embedded within the platen; a secondelectrostatic clamping electrode embedded within the platen; an outerring-shaped RF electrode, embedded within the platen, that surrounds thefirst and second electrostatic clamping electrodes and comprises a feedstrip that extends radially across the platen between the first andsecond electrostatic clamping electrodes; and at least three terminals,wherein the at least three terminals comprises a first terminalconnected to an underside of the first electrostatic clamping electrode,a second terminal connected to an underside of the second electrostaticclamping electrode, and a third terminal connected to an underside ofthe outer ring-shaped RF electrode at the feed strip.
 2. Theelectrostatic chuck of claim 1, wherein the first and secondelectrostatic clamping electrodes have opposite polarities.
 3. Theelectrostatic chuck of claim 1, wherein the first and secondelectrostatic clamping electrodes are configured to be powered by a DCchucking voltage between about 200 V and about 2000 V toelectrostatically clamp the substrate, and wherein the outer ring-shapedRF electrode is configured to be powered by an RF power sourceconfigured to provide an RF bias voltage at a frequency between about400 kHz and about 60 MHz at a power between about 50 W and about 3000 W.4. The electrostatic chuck of claim 1, wherein the third terminal ispositioned at a center of the platen, wherein the second terminal isradially offset from the third terminal and the first terminal isradially offset from the third terminal.
 5. The electrostatic chuck ofclaim 1, wherein the outer ring-shaped RF electrode, the firstelectrostatic clamping electrode, and the second electrostatic clampingelectrode are coplanar.
 6. The electrostatic chuck of claim 1, furthercomprising: a plurality of resistance heaters embedded in the platen ata location beneath the first and second electrostatic clampingelectrodes.
 7. The electrostatic chuck of claim 1, wherein the first,second, and third terminals extend axially through openings in theplaten and the first and second terminals are aligned along a diagonalline passing through the location of the third terminal.
 8. Anelectrostatic chuck, comprising: a platen having an upper surfaceconfigured to support a substrate; a first electrostatic clampingelectrode embedded within the platen; a second electrostatic clampingelectrode embedded within the platen; an outer ring-shaped RF electrode,embedded within the platen, that surrounds the first and secondelectrostatic clamping electrodes and comprises a feed strip thatextends radially across the platen between the first and secondelectrostatic clamping electrodes; and a plurality of hollow feed rodsconfigured to supply power to the first and second electrostaticclamping electrodes and to the outer ring-shaped RF electrode.
 9. Theelectrostatic chuck of claim 8, wherein the first and secondelectrostatic clamping electrodes have opposite polarities.
 10. Theelectrostatic chuck of claim 8, wherein the first and secondelectrostatic clamping electrodes are configured to be powered by a DCchucking voltage between about 200 V and about 2000 V toelectrostatically clamp the substrate, and wherein the outer ring-shapedRF electrode is configured to be powered by an RF power sourceconfigured to provide an RF bias voltage at a frequency between about400 kHz and about 60 MHz at a power between about 50 W and about 3000 W.11. The electrostatic chuck of claim 8, further comprising: a stemattached to the platen; and at least three terminals located inside thestem.
 12. The electrostatic chuck of claim 11, wherein the plurality ofhollow feed rods are located inside the stem and configured to supplythe power to the first and second electrostatic clamping electrodes andthe outer ring-shaped RF electrode via the at least three terminals. 13.The electrostatic chuck of claim 8, wherein the outer ring-shaped RFelectrode, the first electrostatic clamping electrode, and the secondelectrostatic clamping electrode are coplanar.
 14. The electrostaticchuck of claim 8, further comprising: a plurality of resistance heatersembedded in the platen at a location beneath the first and secondelectrostatic clamping electrodes.
 15. The electrostatic chuck of claim8, wherein the feed strip extends diagonally across the platen betweenthe first and second electrostatic clamping electrodes to connect to theouter ring-shaped RF electrode at two locations 180 degrees apart.